Explorations for high performance SiGe-heterojunction bipolar transistor integration

P. Deixler,Hendrik G. A. Huizing,J.J.T.M. Donkers,Johan Hendrik Klootwijk,D.M.H. Hartskeerl,W.B. de Boer,R.J. Havens,R. van der Toorn,J.C.J. Paasschens,W.J. Kloosterman,J. G. M. van Berkum,Doede Terpstra,J W Slotboom

Explorations for high performance SiGe-heterojunction bipolar transistor integration

2001

P. Deixler
Hendrik G. A. Huizing
J.J.T.M. Donkers
Johan Hendrik Klootwijk
D.M.H. Hartskeerl
W.B. de Boer
R.J. Havens
R. van der Toorn
J.C.J. Paasschens
W.J. Kloosterman
J. G. M. van Berkum
Doede Terpstra
J W Slotboom

Presents a SiGe HBT integration-study, introducing a low-complexity integration-scheme. We demonstrate a stepped box-like SiGe base-profile designed to reduce reverse Early effects, achieving f/sub T/=55 GHz and BV/sub CEO/=2.7 V. The transistor characteristics are well modeled by Mextram 504.

Keywords:

Physics
Electrical engineering
Heterojunction bipolar transistor
Bipolar junction transistor
Transistor
Heterostructure-emitter bipolar transistor
Current injection technique
Field-effect transistor
Electronic engineering
semiconductor materials
Spice
Optoelectronics

Correction
Source
Cite
Save
Machine Reading By IdeaReader

References

Citations