SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory

Timothy R. Oldham,Raymond L. Ladbury,M. Friendlich,Hak S. Kim,Melanie D. Berg,Tim Irwin,Christina M. Seidleck,K. A. LaBel

SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory

2006

Timothy R. Oldham
Raymond L. Ladbury
M. Friendlich
Hak S. Kim
Melanie D. Berg
Tim Irwin
Christina M. Seidleck
K. A. LaBel

An advanced commercial 2Gbit NAND flash memory (90 nm technology, one bit/cell) has been characterized for TID and heavy ion SEE. Results are qualitatively similar to previous flash results in most respects, but we also detected a new dynamic failure mode

Keywords:

Non-volatile memory
CMOS
Physics
Charge trap flash
Electronics
NAND gate
Electronic engineering
Flash memory
Failure mode and effects analysis
heavy ion
nand flash memory

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