Ultra-shallow junction formation by gas immersion laser doping (GILD) on silicon bulk and SOI substrate

Gas Immersion Laser Doping (GILD) is a very attractive technique to realize the ultra-shallow and highly doped junctions required by the International Technology Roadmap for Semiconductors for future CMOS technologies. In this paper, we present some results of junctions realized by GILD and we show the interest of excimer laser annealing. The laser-processed samples have been characterized by four-point probes and Secondary Ion Mass Spectroscopy. Junction formation has been controlled using in-situ transient reflectivity. These results show that this technique could be an attractive solution for CMOS ultimate junctions.