Exploringan Approach toward the Intrinsic Limitsof GaN Electronics
2020
To fully exploit
the advantages of GaN for electronic devices,
a critical electric field that approaches its theoretical value (3
MV/cm) is desirable but has not yet been achieved. It is necessary
to explore a new approach toward the intrinsic limits of GaN electronics
from the perspective of epitaxial growth. By using a novel two-dimensional
growth mode benefiting from our high-temperature AlN buffer technology,
which is different from the classic two-step growth approach, our
high-electron-mobility transistors (HEMTs) demonstrate an extremely
high breakdown field of 2.5 MV/cm approaching the theoretical limit
of GaN and an extremely low off-state buffer leakage of 1 nA/mm at
a bias of up to 1000 V. Furthermore, our HEMTs also exhibit an excellent
figure-of-merit (Vbr2/Ron,sp) of 5.13 × 108 V2/Ω·cm2.
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