Investigating the Role of Niobium Pentoxide as Transparent Conductive Oxide layer on the Efficiency of Thin Film Amorphous Silicon Solar Cell

In this paper, three different TeOs as a window layer growing on a typical a-Si:H n - i - p - p+ solar cell are separately compared. These layers are In 2 O 3 :Sn (ITO), Nb 2 O 5 , In 2 O 3 :W (IWO) respectively. Thickness of each layer is chosen in range of 50 to 150 nanometers. Nb 2 O 5 is a new idea for window layer. In comparison with the other used materials, using Nb 2 O 5 as a window layer in solar cell structure results higher open circuit voltage and Fill Factor therefore the efficiency is improved 2.7%.