Improved subthreshold characteristics in tunnel field-effect transistors using shallow junction technologies

Abstract Si n–i–p tunnel field-effect transistor (TFET) fabricated by plasma implantation and laser annealing is proposed. This TFET has sharp lateral source doping profile, which can reduce the tunneling distance and improve carrier tunneling. Enhanced on-current (12 μA/μm) and improved I ON / I OFF ratio (6 × 10 6 ) are observed in this TFET [ V DS  = ( V GS  −  V BTBT ) = −1.1 V; V BTBT is the V GS at the lowest subthreshold current observed at given V DS ] at T  = 300 K. In addition, the TFET fabricated by laser annealing shows improved subthreshold characteristics, reduced tunneling resistance and smaller threshold voltage than TFET fabricated by rapid thermal annealing. Low-temperature measurements of this TFET were also performed to confirm the carrier injection mechanism of band-to-band tunneling. Plasma implantation and laser annealing are effective and suitable to be applied in current CMOS technology for low power devices.