First Demonstration of $\text{In}_{1-\mathrm{x}}\text{Ga}_{\mathrm{x}}\text{As}$ Macaroni Channel for Future 3-D NAND

We demonstrate for the first time epitaxially grown InGaAs macaroni channel down to 15 nm thickness for 3-D NAND with a low temperature ( OFF w.r.t. full channel is demonstrated, while retaining a similar ION of full channel InGaAs and same memory performance.