Aluminum nitride doped with transition metal group atoms as a material for spintronics

The overview of scientific literature on the electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on the literature sources published mainly in the last 10 years. The doping was carried out by various methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the grown material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and is a promising material for spintronics.