Enhanced electrical characteristics of Au nanoparticles embedded in high-k HfO2 matrix

We present experimental results for laser-induced Au nanoparticle (NP) embedded in a HfO2 high-k dielectric matrix. Cross-sectional transmission electron microscopy images showed that the Au NPs of 8nm in diameter were clearly embedded in HfO2 matrix. Capacitance-voltage measurements of Pt∕HfO2∕AuNPs∕HfO2 on p-type Si substrate reliably exhibited metal-oxide-semiconductor behavior with a large flatband shift of 4.7V. In addition, the charge retention time at room temperature was found to exceed 105h. This longer time was attributed to the higher electron barrier height via high work function of the Au NP.