Method for manufacturing group iii nitride semiconductor light-emitting device, and group iii nitride semiconductor light-emitting device

PROBLEM TO BE SOLVED: To provide: a method for manufacturing a group III nitride semiconductor light-emitting device, which enables the increase in device life; and a group III nitride semiconductor light-emitting device.SOLUTION: In a method for manufacturing a group III nitride semiconductor light-emitting device 1 including an n-type semiconductor layer, a light-emitting layer 40 of a quantum well structure having a well layer and a barrier layer which include at least Al, and a p-type semiconductor layer 150 in this order, a process for forming the p-type semiconductor layer 150 includes: an electronic block layer formation step for forming, over the light-emitting layer 40, an electronic block layer 51 larger than the barrier layer 42 in Al composition; a nitrogen carrier gas supply step for at least supplying a carrier gas including nitrogen as a primary component to a surface of the electronic block layer 51; and a second p-type contact formation step for forming, over the electronic block layer 51, a second p-type contact layer 55 of AlGaN(0≤y≤0.1) after the nitrogen carrier gas supply step. The second p-type contact formation step is performed by use of a carrier gas including hydrogen as a primary component.SELECTED DRAWING: Figure 2