Compact THz-source based on femtosecond Ti:Sapphire laser and intracavity photoconductive emitter

By integration of a semiconductor mirror into a chirped mirror based Ti:Sapphire oscillator a very compact pulsed Terahertz source is demonstrated. Terahertz radiation is generated by a transient photocurrent in a LT-GaAs layer grown on a semiconductor saturable absorber mirror. This technique allows the manufacturing of ultra-stable, small-size (600 x 200 mm) and self-starting THz systems pushing forward the usability and availability for commercial pulsed Terahertz sources. The Terahertz spectrum goes up to 3 THz and average output power of about 7 μW is achieved.