Quantitative modeling of the temperature-dependent internal Quantum Efficiency in InGaN light emitting diodes

The temperature dependence of the internal quantum efficiency (IQE) of blue InGaN-based light emitting diodes is analyzed both experimentally and theoretically with a drift-diffusion transport model. A high-performance reference structure and two improved epitaxial designs are compared at different operating temperatures. In contrast to a simple ABC model, the proposed approach allows for quantitative predictions of IQEs including optimizations regarding spatial carrier distributions at room temperature. At elevated temperatures, a moderate increase of the Auger coefficient gives a more precise agreement between experiment and simulations. The results show that the model is suitable to quantitatively predict the IQE for different structures and temperatures.