A temperature study of photosensitivity in SLS polycrystalline silicon TFTs

The effect of illumination on the performance of polycrystalline silicon TFTs is investigated by the temperature analysis of the transfer characteristics. The study involved devices fabricated on columnar grain films in order to take also into account the role of material structure. The photosensitivity of devices decreases with increasing temperature and it vanishes above 350 K. Moreover the results suggest that the polycrystalline material microstructure must be taken into account according to the needs of the corresponding applications.