Optical and electrical properties of polycrystalline GaN films prepared by post-nitridation technique

Gallium nitride (GaN) films with hexagonal structure were prepared by post-nitridation technique. XRD results indicate that the polycrystalline GaN with hexagonal structure was successfully grown on the Si (1 1 1) substrate. The photoluminescence spectra of the films show a strong UV emission at room temperature. The field emission property and Raman spectrum of GaN are also investigated.