Integrated on-chip inductors using magnetic material (invited)

2008 
On-chip inductors with magnetic material are integrated into both advanced 130 and 90nm complementary metal-oxide semiconductor processes. The inductors use aluminum or copper metallization and amorphous CoZrTa magnetic material. Increases in inductance of up to 28 times corresponding to inductance densities of up to 1.3 μH/mm2 were obtained, significantly greater than prior values for on-chip inductors. With such improvements, the effects of eddy currents, skin effect, and proximity effect become clearly visible at higher frequencies. The CoZrTa was chosen for its good combination of high permeability, good high-temperature stability (>250°C), high saturation magnetization, low magnetostriction, high resistivity, minimal hysteretic loss, and compatibility with silicon technology. The CoZrTa alloy can operate at frequencies up to 9.8GHz, but trade-offs exist between frequency, inductance, and quality factor. The effects of increasing the magnetic thickness on the permeability spectra were measured and mod...
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