An MOS field‐effect transistor fabricated on a molecular‐beam epitaxial silicon layer
1979
An MOS field‐effect transistor which has a buried channel structure and operates in the depletion mode is first fabricated on a molecular‐beam epitaxial silicon layer. The field‐effect mobility of this MOSFET is comparable to those of the MOSFET’s fabricated on conventional single crystals of silicon.
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