ESD evaluation of a low voltage triggering SCR (LVTSCR) device submitted to transmission line pulse (TLP) test

Abstract For a deeper understanding of protection structures during ESD events, transmission line pulse events are applied and simulated with a two-dimensional (2D) device simulator on the particular case of a 1.2 μm low voltage triggering silicon controlled rectifier. Thanks to measurements and simulated results, we were able to evaluate the robustness of the structure in terms of ESD. This article also focuses on the different behavior modes of such a device depending on the current level applied to the electrodes.