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A. Guilhaume
A. Guilhaume
Institut national des sciences Appliquées de Lyon
Electronic engineering
Engineering
Transmission-line pulse
Electrostatic discharge
NMOS logic
6
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7
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Experimental measurements and 3D simulation of the parasitic lateral bipolar transistor triggering within a single finger gg-nMOS under ESD
2004
Microelectronics Reliability
Philippe Galy
V. Berland
A. Guilhaume
F. Blanc
Jean-Pierre Chante
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ESD evaluation of a low voltage triggering SCR (LVTSCR) device submitted to transmission line pulse (TLP) test
2002
Journal of Electrostatics
A. Guilhaume
Philippe Galy
Jean-Pierre Chante
B. Foucher
S. Bardy
F. Blanc
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Human Body Model test of a Low Voltage Threshold SCR device: Simulation and comparison with the Transmission Line Pulse test
2001
EOS/ESD | Electrical Overstress/Electrostatic Discharge Symposium
A. Guilhaume
Jean-Pierre Chante
Philippe Galy
B. Foucher
S. Bardy
F. Blanc
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Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges
2001
Microelectronics Reliability
A. Guilhaume
Philippe Galy
Jean-Pierre Chante
B. Foucher
F. Blanc
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Numerical study of a gg-nMOS protection transistor under ionizing radiation and electrostatic discharge
2001
RADECS | European Conference on Radiation and Its Effects on Components and Systems
Philippe Galy
V. Berland
A. Guilhaume
B. Foucher
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Numerical investigation for a grounded gate NMOS transistor under electrostatic discharge (ESD) through TLP method
2000
Microelectronics Reliability
Philippe Galy
V. Berland
B. Foucher
I. Lombaert-Valot
A. Guilhaume
Jean-Pierre Chante
S. Dufrenne
Serge Bardy
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Citations (3)
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