ZrO2 gate pH-sensitive field effect transistor

Abstract A cubic structure polycrystalline ZrO 2 gate pH-sensitive FET with SiO 2 and Si 3 N 4 dielectric layers is presented. Transfer, output and chemical response characteristics of the ISFET are given. The influence of electrolytic components, both cations and anions, upon the ISFET chemical response is tested. ISFET selectivity coefficients for different pH values and interfering cation concentrations are listed. The linearity of the ISFET chemical response is discussed. The influence of temperature and light upon sensor response is given.