Experimental demonstration of a ferroelectric FET using paper substrate

A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solutionbased-only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of 920V for the transistor on paper. An on/off current ratio of 9102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).