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光化学蒸着SiO2層を有するAlGaN/GaN MOS‐HFETの高温特性と高周波特性
光化学蒸着SiO2層を有するAlGaN/GaN MOS‐HFETの高温特性と高周波特性
2005
Chih-Kai Wang
Ricky W. Chuang
S. J. Chang
Yan-Kuin Su
Sun-Chin Wei
T. K. Lin
T. K. Ko
Yu Zung Chiou
Jing Jou Tang
Keywords:
Inorganic chemistry
Chemistry
Nanotechnology
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