Measuring arrangement and method for operating the measuring arrangement
2008
measuring arrangement - with a plurality of semiconductor devices (1) which are arranged in a separate trough of a semiconductor substrate (101), wherein each semiconductor component (1) comprising: - at least one planar to a top surface (102) of a semiconductor substrate (101) adjacent doped region (103) - one on the top (102) of the semiconductor substrate (101) to the doped region (103) adjacent insulating layer (104), - arranged one on the insulating layer (104) gate layer (105), - at least one interface state (106) in the interface between the insulating layer (104) and semiconductor substrate (101) - a voltage source (2) connected to a first terminal (201) is connected to a selection unit (7) and to a second terminal (202) to a reference potential (GND), - a measuring unit (3), wherein the measuring unit (3): - at least a first and a second input (301, 302) and an output (303), - the first input (301) connected to the semiconductor substrate (101) connected ...
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