Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy

Single quantum wells in the system Si1_xGex/Si with x < 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more stable molecular Ge flow. The grown heterostructures are studied by transmission scanning electron microscopy methods