Etch durable spin-on hard mask

As decreasing the device feature size, the film stack structure used in resist process is also changing. Especially multilayer stack film structure is getting popular for pattern formation on critical layers. Our approach is to form a spin-on hard mask film with high etch resistance by introduction of a new baking function. The results show that a spin-on hard mask film processed by an underlayer coating system of Tokyo Electron Ltd. (TEL) has drastically improved etch resistance compared to a conventional system. We will report the availability of new underlayer system using several kinds of underlayer materials.