Enhanced FMR linewidth and magnetic properties of In3+-doped YIG ferrite materials for microwave devices applications

Abstract Herein, In-doped Y3Fe5-xInxO12 (x = 0.00–0.75 with a step of 0.15) material was fabricated via solid state route. Mixed powders were sintered at 1450 °C for 6 h in the air. The microstructure and magnetic properties were examined by X-ray diffraction (XRD), Scanning electron microscope (SEM), Raman spectra, Vibrating sample magnetometer (VSM), and ferromagnetic resonance (FMR). Results show that In3+ ion substitution did not change crystal type of YIG ferrite and increased bulk density. SEM observations indicate that doped In3+ ion not only entered the crystal but also affected the grain size. According to VSM results, by increasing In3+ ion content from x = 0.00 up to x = 0.75, saturation magnetization (Ms) enhanced from 25.8 emu/g to 28.21 emu/g (x = 0.45). Then, Ms declined to 19.33 emu/g. Furthermore, narrowest FMR line width (ΔH) was obtained (ΔH = 36.7 Oe at x = 0.45) based on In-doping. The proposed material has potential for use in antenna or high-frequency applications in phase shifter, circulator, and microwave high-frequency components.