Simulation of plasma oscillation response to THz radiation applied upon high electron mobility transistors

Abstract—By means of a numerical hydrodynamic (HD) modelcoupled with Poisson pseudo-2D equation , we simulate the draincurrent response of a high electron mobility transistor (HEMT)to a THz signal applied to its gate and/or to its drain contacts inorder to obtain the optimal configuration in terms of detection. I. I NTRODUCTION Study of plasma oscillation in two dimensional electronicgas (2D) channel was initiated by Dyakonov and Shur [1], [2].they showed that the nonlinear properties of the 2D plasma inthe FET channel can be used for detection of the THz emission.The resonant detection of THz radiation by two-dimensionalplasma waves was demonstrated using InAlAs/InGaAs Highelectron mobility transistor (HEMT) [4], and at room temper-atures [3]. In this paper, by simulating the High Electron Mo-bility Transistor (HEMT) drain current response, we study theplasma wave oscillation and optimise the HEMT performancesas THz detector.II. A NALYTICAL MODEL AND DISCUSSION GateSource Channel DrainBuffer/substrateV