Quantum Confinement Based SOI Single-hole Transistor

We report on a single-hole transistor (SHT) exhibiting Coulomb blockade oscillations at temperatures in excess of 100 K consistent with a measured Coulomb charging energy of 20 meV. The device is fabricated using a fully CMOS compatible SOI technology with lithography resolution of 100 nm. The quantum effects on the SHT have been investigated by solving Poisson and Schrdinger equations self-consistently. The results show that quantum confinement tunnel barriers are most likely responsible for the observed device characteristics. We discuss the origin of the unusual combination of a large Coulomb energy with a large tunneling conductance.