Role of Ozone in the Oxidation of YBa2Cu3O7-x Thin Films

The effect of ozone on the oxidation of c-axis oriented YBa2Cu3O7−x thin films has been investigated. In-situ resistivity measurements were performed in post-deposition annealing to monitor the diffusion of oxygen in the thin film. It was found that the diffusion coefficient 4.2×10−15 cm2/s at 400 °C of YBa2Cu3O7−x thin films in ozone was approximately equal to that in molecular oxygen. In oxidation using ozone, an ozone flux about 1016 cm−2·s−1 at background pressure 1 mTorr and 400 °C was sufficient to obtain the same steady-state resistivity as in molecular oxygen at 760 Torr and 400 °C.