Effects of sub-gate bias on the operation of Schottky-barrier SOI MOSFETs having nano-scale channel

The characteristics of a novel nano-scale silicon-on-insulator (SOI) device featuring silicide Schottky source/drain and field-induced S/D extensions induced by a sub-gate were investigated. The new device exhibits unique and high-performance bi-channel operation capability. In this work, particular attention was paid to the effects of subgate bias on the device operation. It is shown that the applied sub-gate voltage not only increases the on-state current, but also effectively suppresses the off-state leakage. Extremely high on/off current ratio (>10/sup 9/) has thus been obtained. Dependences of sub-gate bias on sub-threshold swing and threshold-voltage roll-off characteristics were also explored.