Epitaxially coated semiconductor wafer and method for the production of an epitaxially coated semiconductor wafer

Epitaxially coated semiconductor wafer, comprising a substrate wafer made of monocrystalline silicon; an epitaxial layer of silicon with a smooth surface on the front side of the substrate wafer, wherein the polished surface has a RMS roughness relation of not more than 0.055 nm on a measurement window with an area of ​​10 microns x 10 microns; a denuded zone with a depth of not less than 6 microns and no more than 14 microns and a region that is adjacent to the denuded zone and having BMD nuclei, which become BMDs having a peak density of not less than 3.5 × 10 A process for the production of an epitaxially coated semiconductor wafer, comprising depositing an epitaxial layer of silicon on the front of a substrate wafer; treating the epitaxial layer with an oxidizing agent; an RTA treatment of the epitaxially coated semiconductor wafer, wherein the epitaxial layer to an atmosphere consisting of argon and ammonia is suspended, and an oxynitride film on the epitaxial layer is formed; removing the oxynitride layer; and polishing the epitaxial layer.