New Quantum-Confinement Based SOI Single-Hole Transistor

In this paper, we demonstrate a single-hole transistor (SHT) with Coulomb blockade oscillations at temperatures in excess of 100 K fabricated using a fully CMOS compatible SOI technology with lithography resolution of 100 nm, already accessible with state-of-the-art optical lithography tools; The quantum effects in the SHT have been investigated by solving Poisson and Schrodinger equations self-consistently. The results show that quantum confinement tunnel barriers are responsible for the observed device characteristics and suggest a new route to make room temperature SHTs.