Ni-based FUSI gates: CMOS Integration for 45nm node and beyond

This work reports the first comprehensive evaluation of FUSI gates for manufacturability, covering the key aspects of integration, process control, reliability, matching, device design and circuit-level benefit. Thanks to a selective and controlled poly etch-back process, dual work-function Ni-based FUSI CMOS circuits with record ring oscillator performance (high-V T applications) have been achieved (17ps at V DD =1.1V and 20pA/mum I off ), meeting the ITRS 45nm node requirement for low power CMOS