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M. Niwa
M. Niwa
IMEC
Electronic engineering
Dielectric
Materials science
Optoelectronics
Metal gate
4
Papers
17
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0
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Ni-based FUSI gates: CMOS Integration for 45nm node and beyond
2006
IEDM | International Electron Devices Meeting
T. Hoffmann
A. Veloso
A. Lauwers
H. Yu
Howard L. Tigelaar
M.J.H. van Dal
T. Chiarella
C. Kerner
Thomas Kauerauf
Adelina Shickova
R. Mitsuhashi
I. Satoru
M. Niwa
A. Rothschild
Benoit Froment
J. Ramos
Axel Nackaerts
Maarten Rosmeulen
S. Brus
C. Vrancken
P. Absil
M. Jurczak
S. Biesemans
Jorge Kittl
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Scaling of Hf-based gate dielectrics - Integration with polysilicon gates
2004
S. De Gendt
Matty Caymax
J. Chen
Martine Claes
Thierry Conard
Annelies Delabie
W. Deweerd
V. Kaushik
A. Kerber
S. Kubicek
M. Niwa
L. Pantisano
Riikka L. Puurunen
L. A. Ragnarsson
T. Schram
Y. Shimamoto
W. Tsai
E. Rohr
S. Van Elshocht
Wilfried Vandervorst
T. Witters
E. Young
Chao Zhao
Marc Heyns
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Implementation of high-k gate dielectrics - a status update
2003
S. De Gendt
J. Chen
Richard Carter
E. Cartier
Matty Caymax
Martine Claes
Thierry Conard
Annelies Delabie
W. Deweerd
V. Kaushik
A. Kerber
S. Kubicek
J.W. Maes
M. Niwa
L. Pantisano
Riikka L. Puurunen
L. A. Ragnarsson
T. Schram
Y. Shimamoto
W. Tsai
E. Rohr
S. Van Elshocht
T. Witters
E. Young
Chao Zhao
Marc Heyns
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Citations (2)
Scaling of Hf-based gate dielectrics - Integration with polysilicon gates
2003
S. De Gendt
Matty Caymax
J. Chen
Martine Claes
Thierry Conard
Annelies Delabie
W. Deweerd
V. Kaushik
A. Kerber
S. Kubicek
M. Niwa
L. Pantisano
Riikka L. Puurunen
L. A. Ragnarsson
T. Schram
Y. Shimamoto
W. Tsai
E. Rohr
S. Van Elshocht
Wilfried Vandervorst
T. Witters
E. Young
Chao Zhao
Marc Heyns
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