Urchin-like artificial gallium oxide nanowires grown by a novel MOCVD/CVD-based route for random laser application

A novel procedure based on a two-step method was developed to obtain β-Ga2O3 nanowires by the chemical vapor deposition (CVD) method. The first step consists in the gallium micro-spheres growth inside a metal-organic chemical vapor deposition environment, using an organometallic precursor. Nanoscale spheres covering the microspheres were obtained. The second step involves the CVD oxidization of the gallium micro-spheres, which allow the formation of β-Ga2O3 nanowires on the micro-sphere surface, with the final result being a nanostructure mimicking nature's sea urchin morphology. The grown nanomaterial is characterized by several techniques, including X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, transmission electron microscopy, and photoluminescence. A discussion about the growth mechanism and the optical properties of the β-Ga2O3 material is presented considering its unknown true bandgap value (extending from 4.4 to 5.68 eV). As an application, the scattering properties of t...