GaSb-based II-VI Semiconductors for Application in Next Generation Infrared Detectors

Wen Lei,Yongling Ren,I. Madni,Renjie Gu,Gilberto A. Umana-Membreno,Jarek Antoszewski,Lorenzo Faraone

GaSb-based II-VI Semiconductors for Application in Next Generation Infrared Detectors

2018

Wen Lei
Yongling Ren
I. Madni
Renjie Gu
Gilberto A. Umana-Membreno
Jarek Antoszewski
Lorenzo Faraone

In this work, we will review our recent effort on developing GaSb-based II-VI semiconductors (mainly HgCdTe/CdTe and HgCdSe epitaxial materials grown on GaSb substrates) for making next generation infrared detectors with features of lower cost and larger array format size.

Keywords:

Cadmium telluride photovoltaics
Optoelectronics
Detector
Epitaxy
Semiconductor
Infrared
Materials science
lower cost

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