Low Tinv (≤ 1.8 nm) Metal-Gated MOSFETs on SiO2 Based Gate Dielectrics for High Performance Logic Applications

V. Ku, R. Amos, A. Steegen, C. Cabral, Jr.*, V. Narayanan*, P. Jamison*, P. Nguyen, Y. Li, M. Gribelyuk, Y. Wang, J. Cai*, A. Callegari*, F. McFeely*, F. Jamin, K. Wong, E. Wu, A. Chou, D. Boyd*, H. Ng, M. Ieong*, C. Wann, R. Jammy*, and W. Haensch* IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, USA IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA E-mail: vku@us.ibm.com, Phone: (845) 894-7011 Fax: (845) 892-6462