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MOS model 9 Parameter Extraction with Realistic Time-Dependence for Hot-Carrier Reliability Simulation
MOS model 9 Parameter Extraction with Realistic Time-Dependence for Hot-Carrier Reliability Simulation
1998
M.M. Lunenborg
J.D. Boter
R.M.D.A. Velghe
Keywords:
Materials science
Electronic engineering
Yttrium
Control engineering
Finite impulse response
Solid modeling
hot carrier reliability
cmos process
Correction
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