New 6.5kV/1000A modules with LOCOS Trench Oxide IGBT Chips and Design Variation for Traction and HVDC Applications

In this paper, we present the design features and test results of new 6.5kV/1000A modules with LOCOS Trench Oxide (LTO) IGBT chips operating at maximum junction temperature of 150 deg C. A nitride LOCOS (Local Oxidation of Silicon) process has been used to achieve IGBT trench gates with thick bottom oxide to ensure long term reliability performance. It is shown that an optmised top cell IGBT design enables optimisation for the technology to target both the low conduction loss HVDC and the low switching loss traction markets with only change in the collector and buffer design.