High speed toggle MRAM with mgO-based tunnel junctions

We report here the first integration of a new generation of high magnetoresistance-ratio (MR) magnetic tunnel junction (MTJ) material with a 90 nm CMOS front-end logic process. This new material, with MgO tunnel barriers, significantly increased the read signal over standard AlO x -based material. The 90 nm CMOS test vehicle has 8 kb arrays of 1T1MTJ memory cells with two orthogonal program lines oriented at 45deg from the bit easy axis for toggle switching. Read and toggle-write operations are demonstrated