Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals

Abstract High mobility p -type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p -type behavior with a high mobility and a hole concentration of 154 cm 2° V − 1 s − 1 and about 3 × 10 18° cm − 3 at 600 °C, respectively. Electrical properties of p - n homo-junction devices based on p -type ZnO film are also discussed.