Heavily carbon-doped GaAs grown on various oriented GaAs substrates by MOMBE

Abstract Heavily carbon-doped GaAs epitaxial layers have been grown simultaneously on (100), (111)A, (111)B, (411)A, (411)B and (711)A semi-insulating (SI) GaAs substrates by metalorganic molecular beam epitaxy (MOMBE) using trimethylgallium (TMG) and elemental As (As 4 ). The hole concentration and surface flatness strongly depend on the substrate orientation. The highest carbon incorporation was observed for the layers grown on a (411)A substrate with a hole concentration of 1.0 × 10 21 cm − 3 and a lattice mismatch of Δd d = −0.48% . Atomic force microscope (AFM) images reveal that the epilayers grown on (411)A substrates exhibit extremely flat surfaces, although these layers contain the highest carbon concentration.