Electrical properties of vanadium tungsten oxide thin films

Abstract The vanadium tungsten oxide thin films deposited on Pt/Ti/SiO 2 /Si substrates by RF sputtering exhibited good TCR and dielectric properties. The dependence of crystallization and electrical properties are related to the grain size of V 1.85 W 0.15 O 5 thin films with different annealing temperatures. It was found that the dielectric properties and TCR properties of V 1.85 W 0.15 O 5 thin films were strongly dependent upon the annealing temperature. The dielectric constants of the V 1.85 W 0.15 O 5 thin films annealed at 400 °C were 44, with a dielectric loss of 0.83%. The TCR values of the V 1.85 W 0.15 O 5 thin films annealed at 400 °C were about −3.45%/K.