Impact of patterning strategy on mask fabrication beyond 32nm
2008
Mask specifications of the pitch splitting type double patterning for 22nm node and beyond in logic
devices have been discussed. The influences of the mask CD error and the mask induced overlay
error on wafer CD have been investigated in both cases of bright field and dark filed. The
specification for intra-layer overlay alignment is much smaller than inter-layer one. The specification
of mask CD uniformity for dark is more challenging. In order to overcome the technology gap
between single patterning and double patterning, many things will have to be improved.
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