Investigation on the Trap Signature in Organic Semiconductor Turmeric Film Through Current–Voltage Analysis

The analytical description of the trap signature in the charge conduction process of turmeric dye-based organic semiconductor has been presented in this study. An analytical explanation of the built-in potential Vx–V graph that emphasizes the presence of trapping states has been provided. Differential analysis of current–voltage (I–V) characteristics has also been conducted to verify the trap signature of the carrier in the device. The non-monotonous decrement of the G(V)–V plot verifies the trap signature. The values of trap energy (Et) and trap factor ( $$ \theta $$ ) have been derived from the logarithmic I–V relationship. From the analysis of the semilogarithmic I–V plot, the barrier height (ϕbi) of the device has also been determined. The overall I–V curve has been taken into account to examine the Richardson–Schottky and Poole–Frenkel effects on the trap-assisted charge conduction process. From the results of the experiment, the Schottky effect has been observed to be effective, which leads to a bulk-limited charge conduction process.