Cryogenic Characteristics of GaAs-based Near-infrared Light Emitting Diodes

High performance infrared light emitting diodes (LED) have drawn wide attention because of their significant applications in biomedicine, agriculture, aquaculture, night vision security systems and scientific researches. Due to the rapid development of infrared up-conversion devices, especially in the terahertz (THz) region, the studies on the GaAs-based infrared LEDs operating at low temperature ( 150 K) than that of the DH-LED. A developed rate equation method is used to analyze the ELE superiority of the QW-LED. Finally, the surface EL uniformity of the two LEDs was studied by using the charge coupled devices (CCD) imaging. This study provides a guidance to choose and design LED structures for different operation temperatures.