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Gate Switching-Mode Low Power Transistor Rectifier using Enhancement-Mode GaAs HEMT
Gate Switching-Mode Low Power Transistor Rectifier using Enhancement-Mode GaAs HEMT
2019
Yoshida Tsuyoshi
Ishikawa Ryo
Honjo Kazuhiko
Keywords:
Energy harvesting
Optoelectronics
Materials science
Power semiconductor device
Rectifier
High-electron-mobility transistor
Correction
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