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Growth Mechanism of Si Thin Film by PECVD Technique: Effect of SIH3 and H Radical Flux on Deposition Rate
Growth Mechanism of Si Thin Film by PECVD Technique: Effect of SIH3 and H Radical Flux on Deposition Rate
2012
H Katayama
Isao Yoshida
Akira Terakawa
Y. Aya
Masahiro Iseki
M Tanaka
Keywords:
Thin film
Flux
Plasma-enhanced chemical vapor deposition
Hydrogen
Materials science
Inorganic chemistry
Etching
Chemical engineering
deposition rate
Correction
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