Detection performance of LT-GaAs-on-Silicon bowtie photoconductive antenna prototype

Bowtie photoconductive antennas (PCAs) with a 10-μm gap were fabricated on epitaxial grown LT-GaAs layers on Silicon substrates (LT-GaAs-on-Si). The samples used were grown with distinct growth parameters. The performance of the PCAs as terahertz detectors are presented in this report.