Thermally Induced Precipitation of Silicon Carbide in a Semiconductor Matrix-Application to Nanoparticle Fabrication.

In this work the Si 1-y C y random alloy is used as a starting point for the creation of nano particles of β-SiC with the same lattice orientation as the Si lattice in which they are grown. These nano particles are between 3 and 8 nm in diameter and are randomly dispersed throughout the Si 1-y C y region, where 0.005antidots of wide bandgap material within the Si matrix should enable the exploration of mesoscopic phenomena