THE PROPERTIES OF LPcvd SisN&iOz FILM ELECTRET BASED ON SILICON

By means of the technology of LPcvd and thermal oxidation the Si3N4/SiOzdoubl e-layer electret fllm was prepared on the different doped silicon wafers. The experimental results show that the Si~N~/SiO~double-layer film posseses a good storage ability of negative charges after modifying the surface with HMDS. and all of the charges were almost traped in the bulk of upper layer SisN4 film. In addition. the TSD spectra of SisN&iOz film were influenced greatly by the differences of the dopes In the silicon wafers.